A family of CMOS Charge-Domain Global Shutter Pixel IP

We offer a more advantegeous solution to traditional global shutter pixel technology, employing a charge-domain based photodiode storage and readout. Our charge-domain Global Shutter pixel IP offerings include pixel sizes from 5.6 downto 2.8 um. A sample table with our CD GS pixel IP availability is shown below:

Parameter

Pixel performance

Pixel pitch

5.6 µm

5.0 µm

3.6 µm

2.8 µm

Full well charge

20,000 e-

20,000 e-

17,000 e-

12,000 e-

Read noise

7.3 e- RMS

7.3 e- RMS

7.3 e- RMS

7.3 e- RMS

Shutter efficiency

32 600:1
-90 dB

15000:1
-84 dB

7500:1
-78 dB

3500:1
-71 dB

Conversion gain

71 µV/e-

71 µV/e-

71 µV/e-

71 µV/e-

FPN

0.13% RMS

TBA

TBA

TBA

PRNU

1.5% RMS

TBA

TBA

TBA

Dark current (60 °C)

222 e-/s

253 e-/s

190 e-/s

190 e-/s

Dark current
memory node (60 °C)

2532 e-/s

2405 e-/s

1709 e-/s

1430 e-/s

Please contact us to request more information on out Global Shutter Pixel IP technology and offerings.