We have completed a number of custom image sensor design projects which are sole owned by our customers, some examples are shown below. Feel free to enquire us for a custom sensor integrated in your future camera system.

 

High-Speed Linescan Sensor for Material Inspection

  • Monochrome linescan sensor with 8k pixels resolution
  • Global shutter
  • High-speed, ADC scalable max-13-bit, min 6-bit. Read noise 2.5 e-
  • Power efficient drawing 3.5W at full-speed dual-line readout
  • Bit-serial sub-LVDS output at 1 Gbps per lane

 

3K 1500 fps Global Shutter CMOS Image Sensor with Flexible Readout Modes

  • Charge-domain global shutter
  • Rolling-shutter capable for interlacing
  • HDR mode with over 96 dB dynamic range
  • Low shutter PLS of > 105 dB
  • 1500 fps at full resolution
  • Charge-domain binning
  • 10-bit high-speed ADC, reconfigurable to 8-bit and 6-bit
  • Bit-serial sub-LVDS at 1 Gbps per lane
  • Power consumption 2W at full-speed

 

0.6 Megapixel Global Shutter CMOS Image Sensor for Medical Imaging

  • 20um pixel pitch, global shutter
  • 200 to 1Me- FW
  • 60 fps
  • 10-bit column-parallel ADC
  • DVP output

 

Low-area 0.3 Megapixel Readout IC for Pixel Development (Rolling and Global shutter)

  • Low-area, 640×640 resolution
  • 12-bit chip-global ADC
  • Flexible input pixel control
  • Multi-slope pixel control
  • Bit-parallel DVP output
  • Compatible with Teradyne CIS wafer testers

 

SXGA 30 fps Global and Rolling Shutter ROIC

  • 1280 x 1024 pixels
  • Flexible resolution control
  • 12-bit column-parallel ADC with in-column PGA
  • Flexible input pixel control
  • Multi-slope pixel control
  • Bit-parallel DVP output
  • Compatible with Teradyne CIS wafer testers

 

12-bit Column-Parallel ADC, 66uW/column, 1.5 MSPS

  • Switchable resolutions from 6 to 13-bit, and speeds from 0.5 MSPS or less to 2 MSPS.
  • Scalable and silicon proven from 1k to 16k channels
  • 110 nm CMOS technology, column pitch 3.8 um to 10 um, silicon proven at 7 um, 5 um and 3.8 um
  • Output noise 200 uV RMS at 1.4V input range
  • Built-in digital correlated double sampling
  • Power consumption including references at 66uW/col at max speed with digital CDS

 

12-bit 20 MSPS ADC

  • Standalone, compact 200um x 200um size.
  • 12-bit 20 MSPS conversion rate.
  • 450 uV RMS output noise at 1.3 V input range.
  • Silicon proven at 110 nm CMOS node, favourable to scaling.
  • Power consumption 1 mW

 

220 Megabit CDR TX-RX communication link

  • Paired transmit-receive blocks
  • Innovative data processing method
  • Digital dual-loop recovery based on PLL and DLL
  • Silicon proven over 220 Megabit transfer over >5m plain cable
  • 440 Megabit transfer capable with some modifications